General Input for Characterization

General TEM

Low-magnification TEM (40k, 100k, and 400k)

General EDS for an large area

In general, I want to have a brief observation about my sample. So, I want to focus only on low magnification TEM and EDS to detect which elements exist in my sample. Please do the TEM at the magnification of 40k and 100k to determine what they are. However, such magnification does not need to strict. For example, 20k or 150k is also good enough. Please consider them case-by-case. Also, could you please take TEM images at 3 different position.I want to know the homogeneous distribution of my sample. For example, in that area there are a lot of quantum dots, and in another area, there are a lot of nanotube, like that. About the TEM at high resolution, it’s good to take one TEM image at 400k magnification, but not in mandatory. If the number of my samples is quite large while the time is limitted, please skip the HRTEM. Afterward, please take EDS checking of large area (for example, 50x magnification, or depending on the morphology). And the elements I expect are: A, B, C, D.
For general TEM – Handsome Nguyen

Typical TEM

High-magnification TEM, EDS, SAED, HAADF

Because I already have data of general TEM (i.e., low magnification TEM), the purpose of this TEM is the HRTEM and other characterization. So, please note this case: low magnification TEM images would be used to support the HRTEM, and low magnification TEM would be meaningless if there is no HRTEM taken. In addition, the LRTEM (if taken) MUST contain the HRTEM. Case-by-case, but I suggest to take HRTEM at 800k magnification, and the LRTEM at 150k and 40k magnification. Please take them 3 times at different positions.

If you can detect the amorphous/crystal interface, or crystal/crystal interface, highly single crystalline (the lattice fringe have square or hexagonal shape), please do HAADF. Afterward, please do EDS Mapping with the elements of A, B, C,D. Finally, please do SAED.

if there are only poor crystalline (parallel lattice fringe), please DON’T do HAADF. In this case, please do EDS Liner and SAED.

Note 1: Please take care about the magnification for taking HAADF. 6M is preffered, and 3M is acceptable. Lower magnification of 1M is meaningless. At low magnification, I cannot detect single atom or the crystal facet of the materials.

Note 2: In the case of damaging sample due to electron beam at high magnification, or the sample is drifted by unknown reason, just briefly take 1 picture to confirm that situation. I need that proof to report my professor. In simple, don’t care about the quality of image. And then, please try to take SAED and EDS mapping. If fail, just stop and characterize other samples.
For typical TEM – Handsome Nguyen

Or, for large amorphous nanoparticle or large bare thin film:

Be careful with the maginification using for taking HAADF

XPS

Typical Elements + C (Carbon) + O (Oxygen) + Valence Band (-10 –> +10 eV)

Interval (step size): 0.1 eV

Background: Si wafer

XRD

Range: 5 –> 90 degree

Interval: ~0.02 degree

Scan rate: 2 degree/min

Substrate (for thin film XRD): general glass

Raman

Range: 100 –> 3400 cm^-1

Interval: ~0.7 cm^-1

Substrate: general glass or Si wafer

FT-IR

Range: 500 –> 4000 cm^-1

Interval: 2 cm^-1 or lower